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AOT4N60/AOTF4N60 600V, 4A N-Channel MOSFET
General Description
The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
VDS (V) = 700V @ 150C ID = 4A RDS(ON) < 2.2
(VGS = 10V)
100% UIS Tested! 100% R g Tested!
TO-220
Top View
TO-220F
D
G
D
G S
D
G S S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter AOT4N60 Symbol AOTF4N60 VDS Drain-Source Voltage 600 VGS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C, G C, G
Units V V A A mJ mJ V/ns W W/ oC C C
TC=25C TC=100C
ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RJA RCS
4 2.5 16 2.5 94 188 5 104 0.83 -50 to 150 300 AOT4N60 65 0.5 1.2
4* 2.5*
Repetitive avalanche energy
Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25C Power Dissipation B Derate above 25 oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D
A
35 0.28
AOTF4N60 65 -3.6
Units C/W C/W C/W
Maximum Case-to-Sink RJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT4N60 / AOTF4N60
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=2A VDS=40V, ID=2A 3 4 1.9 7.4 0.77 1 4 16 400 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 40 3.5 3.3 511 51 4.4 4.2 15.0 VGS=10V, VDS=480V, ID=4A 3.0 7.6 20.2 VGS=10V, VDS=300V, ID=4A, RG=25 IF=4A,dI/dt=100A/s,VDS=100V 28.7 36 27 212 1.6 254 1.9 615 65 5.3 6.3 18.0 3.6 9.1 Min 600 700 0.69 1 10 100 5 2.2 Typ Max Units V V
o V/ C
A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/s,VDS=100V
A. The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C, Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2.5A, VDD=50V, RG=25, Starting TJ=25C Rev 2. Nov.2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT4N60 / AOTF4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8 10V 6 6V ID (A) 4 ID(A) 10 125C 1 25C 0.1 0 5 10 15 20 25 30 2 4 6 8 10 VDS (Volts) Fig 1: On-Region Characteristics 4.0 Normalized On-Resistance 3.5 3.0 2.5 2.0 1.5 1.0 0 1 2 3 4 5 6 7 8 9 0 -100 -50 0 50 100 150 200 3 2.5 2 1.5 1 0.5 VGS=10V ID=2A 6.5V 100 VDS=40V -55C
2
VGS=5.5V
0
VGS(Volts) Figure 2: Transfer Characteristics
200 16
RDS(ON) ()
VGS=10V
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01
BVDSS (Normalized)
1.1 IS (A)
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04
125C 25C
1
0.9
0.8 -100
1.0E-05 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
TJ (oC) Figure 5: Break Down vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT4N60 / AOTF4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 VDS=480V ID=4A Capacitance (pF) 1000 10000 Ciss
12
VGS (Volts)
9
Coss
6
100 Crss
3
0 0 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 5 20
10 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 100
100
100
200 16
10 ID (Amps)
10s
ID (Amps)
10
10s RDS(ON) limited 100s 1ms 10ms 0.1s 1s 10s
RDS(ON) limited
1
100s 1ms DC 10ms 0.1s
1 DC 0.1 TJ(Max)=150C TC=25C
0.1
TJ(Max)=150C TC=25C
1 10 VDS (Volts) 100
0.01 1000
0.01 1 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF4N60 (Note F) 100 1000
Figure 9: Maximum Forward Biased Safe Operating Area for AOT4N60 (Note F)
5 4 Current rating ID(A) 3 2 1 0 0 25 50 75 100 125 150 TCASE (C) Figure 11: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT4N60 / AOTF4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.2C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 10 100
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT4N60 (Note F)
10 ZJC Normalized Transient Thermal Resistance
200 16
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=3.6C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD Ton
0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1
T 10 100
1
Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF4N60 (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT4N60 / AOTF4N60
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VD C
10V
DUT Vgs Ig
+
VDC
Vds
Qgs
Q gd
-
Charge
Res istive Switching Test Circuit & Waveforms
R L Vds Vds
Vgs Rg Vgs
DU T
+
VD C
90% Vdd 10% Vgs
t d(o n) tr t on
t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR
BVDSS
+
VDC
Vdd
-
Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs Qrr = - Idt
Vds Vgs Ig
Isd
L
Isd
IF
+
VD C
dI/dt IRM
trr
Vdd Vds
-
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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